MBE systems
KT-MBE-350
Molecular beam epitaxy (MBE) system
A general-purpose MBE system for 2D films, heterostructures, and superlattices on wafers up to 2 inches, with a continuously rotating tungsten-heater stage.
Features
- Wafer-scale growth down to smaller coupons
- Optional LN2 cryoshroud, source shutters, and shared water cooling
- Programmed growth with interlock protection
- Ports left open for later upgrades
Specifications
| Parameter | Value |
|---|---|
| Main chamber | |
| Sample size | 2 inch and smaller |
| Chamber diameter | 300 mm |
| Base pressure | < 2×10⁻¹⁰ mbar |
| Base pressure with LN2 shroud | < 5×10⁻¹¹ mbar |
| Source ports | 13 (DN40CF / DN63CF) |
| Bake temperature | 150 °C |
| Heater stage | |
| Heater | Tungsten filament |
| Maximum temperature | 1350 °C |
| Temperature stability | ±0.1 °C |
| Substrate rotation | 360° continuous |
| Cooling | Water |
| Z travel | 0–25 mm |
| Load-lock | |
| Base pressure | < 2×10⁻⁸ mbar |
| Sample storage | 3 |